MM-WAVE DIELECTRIC PARAMETERS OF MAGNESIUM FLUORIDE GLASS WAFERS

Processing and Characterization of 300 mm Argon-Annealed Wafers

High nitrogen doped 300 mm silicon wafers annealed in 100 % argon ambient were investigated whether modified pulling conditions will lead to improved slip behavior and homogeneous radial oxygen precipitation. It turned out that increasing of the cooling rate during crystal pulling is beneficial on these wafer defect parameters. The void morphology was investigated by TEM and oxygen precipitatio...

Design of a mm-wave Planar CPW-fed Tapered Dielectric Rod Antenna

Transplacental Transport of Fluoride, Calcium and Magnesium

s: Background: In fluorosis endemic area, the amount of fluoride transferred to the fetus is significant in determining the early onset of fluorosis. The role played by placenta in transporting fluoride and other ions which are present in high concentrations in the local drinking water is studied. Aims & Objectives: The aim of the present study is to decipher the role of placenta in transport o...

Evidence for Unfractiona Ted Magnesium Isotopes in Genesis Sos Wafers

0.1 μm InP HEMT MMIC Fabrication on 100 mm Wafers for Low Cost, High Performance Millimeter-Wave Applications

Northrop Grumman Space Technology (NGST) has recently initiated process development for fabricating 0.1 μm InGaAs/InAlAs/InP High Electron Mobility Transistor (HEMT) MMICs on 100 mm InP substrates. Successful development of this process will further reduce costs for InP HEMT MMICs and rival those of GaAs-based HEMT MMICs, including GaAs-based metamorphic HEMT technology, with superior performan...